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mrf6s18100nr1 MRF6S18100NBR1 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for gsm and gsm edge base station applications with frequencies from 1800 to 2000 mhz. suitable for tdma, cdma and multicarrier amplifier applications. gsm application ? typical gsm performance: v dd = 28 volts, i dq = 900 ma, p out = 100 watts, full frequency band (1805 - 1880 mhz or 1930 - 1990 mhz) power gain ? 14.5 db drain efficiency ? 49% gsm edge application ? typical gsm edge performance: v dd = 28 volts, i dq = 700 ma, p out = 40 watts avg., full frequency band (1805 - 1880 mhz or 1930 - 1990 mhz) power gain ? 15 db drain efficiency ? 35% spectral regrowth @ 400 khz offset = - 63 dbc spectral regrowth @ 600 khz offset = - 76 dbc evm ? 2% rms ? capable of handling 5:1 vswr, @ 28 vdc, 1990 mhz, 100 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? designed for lower memory effects and wide instantaneous bandwidth applications ? 200 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc total device dissipation @ t c = 25 c derate above 25 c p d 343 1.96 w w/ c storage temperature range t stg - 65 to +175 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 100 cw case temperature 77 c, 40 cw r jc 0.51 0.62 c/w 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf6s18100n rev. 1, 5/2006 freescale semiconductor technical data mrf6s18100nr1 MRF6S18100NBR1 1805 - 1990 mhz, 100 w, 28 v gsm/gsm edge lateral n - channel rf power mosfets case 1486 - 03, style 1 to - 270 wb - 4 mrf6s18100nr1 case 1484 - 04, style 1 to - 272 wb - 4 MRF6S18100NBR1 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor mrf6s18100nr1 MRF6S18100NBR1 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 500 nadc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 330 adc) v gs(th) 1.6 2 3 vdc gate quiescent voltage (v ds = 28 vdc, i d = 900 madc, measured in functional test) v gs(q) 1.5 2.8 3.5 vdc drain- source on - voltage (v gs = 10 vdc, i d = 3.3 adc) v ds(on) ? 0.24 ? vdc forward transconductance (v ds = 10 vdc, i d = 3.3 adc) g fs ? 5.3 ? s dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.5 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, p out = 100 w, i dq = 900 ma, f = 1930- 1990 mhz power gain g ps 13 14.5 16 db drain efficiency d 47 49 ? % input return loss irl ? -12 -9 db p out @ 1 db compression point p1db 100 110 ? w 1. part internally matched both on input and output. (continued)
mrf6s18100nr1 MRF6S18100NBR1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted (continued) characteristic symbol min typ max unit typical gsm edge performances (in freescale gsm edge test fixture, 50 hm system) v dd = 28 vdc, i dq = 700 ma, p out = 40 w avg., 1805- 1880 mhz or 1930 - 1990 mhz edge modulation power gain g ps ? 15 ? db drain efficiency d ? 35 ? % error vector magnitude evm ? 2 ? % rms spectral regrowth at 400 khz offset sr1 ? -63 ? dbc spectral regrowth at 600 khz offset sr2 ? -76 ? dbc typical cw performances (in freescale gsm test fixture, 50 hm system) v dd = 28 vdc, i dq = 900 ma, p out = 100 w, 1805- 1880 mhz power gain g ps ? 14.5 ? db drain efficiency d ? 49 ? % input return loss irl ? -12 ? db p out @ 1 db compression point p1db ? 110 ? w
4 rf device data freescale semiconductor mrf6s18100nr1 MRF6S18100NBR1 figure 1. mrf6s18100nr1(nbr1) test circuit schematic ? 1930 - 1990 mhz z9 0.485 x 1.000 microstrip z10* 0.590 x 0.083 microstrip z11* 0.805 x 0.083 microstrip z13, z14 0.870 x 0.080 microstrip pcb taconic tlx8 - 0300, 0.030 , r = 2.55 *variable for tuning. z1, z12 0.250 x 0.083 microstrip z2* 0.450 x 0.083 microstrip z3* 0.535 x 0.083 microstrip z4* 0.540 x 0.083 microstrip z5 0.365 x 1.000 microstrip z6 1.190 x 0.080 microstrip z7, z8 0.115 x 1.000 microstrip v bias v supply rf output rf input dut c1 c2 c3 c4 c5 r1 z1 z2 z3 c6 z8 r2 z6 r3 z7 z13 z14 v supply c11 c12 c13 c7 c8 z4 z5 z9 c10 z10 z11 z12 c14 + c9 table 6. mrf6s18100nr1(nbr1) test circuit component designations and values ? 1930 - 1990 mhz part description part number manufacturer c1 100 nf chip capacitor (1206) 1206c104kat avx c2, c3, c6, c10, c11 6.8 pf 600b chip capacitors 600b6r8bw atc c4, c5, c12, c13 4.7 f chip capacitors (1812) c4532x5r1h475mt tdk c7 0.3 pf 700b chip capacitor 700b0r3bw atc c8 1.3 pf 600b chip capacitor 600b1r3bw atc c9 0.5 pf 600b chip capacitor 600b0r5bw atc c14 470 f, 63 v electrolytic capacitor, radial 13661471 philips r1, r2 10 k , 1/4 w chip resistors (1206) r3 10 , 1/4 w chip resistor (1206)
mrf6s18100nr1 MRF6S18100NBR1 5 rf device data freescale semiconductor figure 2. mrf6s18100nr1(nbr1) test circuit component layout ? 1930 - 1990 mhz mrf6s18100n cut out area r1 rev. 0 r2 c1 c2 r3 c6 c7 c8 c14 c3 c4 c5 c9 c10 c11 c12 c13
6 rf device data freescale semiconductor mrf6s18100nr1 MRF6S18100NBR1 typical characteristics ? 1930 - 1990 mhz g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 13 1900 20 g ps v dd = 28 vdc i dq = 900 ma 17 60 50 40 30 2020 irl figure 3. power gain, input return loss and drain efficiency versus frequency @ p out = 100 watts ?30 0 ?10 ?20 ?40 d , drain efficiency (%) 16 15 14 d 1920 1940 1960 1980 2000 g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 13 1900 20 g ps v dd = 28 vdc i dq = 900 ma 17 60 50 40 30 2020 irl figure 4. power gain, input return loss and drain efficiency versus frequency @ p out = 40 watts ?30 0 ?10 ?20 ?40 d , drain efficiency (%) 16 15 14 d 1920 1940 1960 1980 2000 figure 5. power gain versus output power p out , output power (watts) v dd = 28 vdc f = 1960 mhz 1125 ma i dq = 1350 ma 10 11 1 16 14 13 12 100 g ps , power gain (db) 15 900 ma 665 ma 450 ma 40 2 0 16 12 10 6 4 20 160 60 80 figure 6. power gain versus output power p out , output power (watts) cw v dd = 12 v 28 v i dq = 900 ma f = 1960 mhz g ps , power gain (db) 24 v 20 v 16 v 32 v 14 8 100 120 140
mrf6s18100nr1 MRF6S18100NBR1 7 rf device data freescale semiconductor typical characteristics ? 1930 - 1990 mhz figure 7. power gain and drain efficiency versus cw output power figure 8. evm versus frequency 100 8 18 1 0 50 v dd = 28 vdc i dq = 900 ma f = 1960 mhz t c = ?30 c ?30 c 25 c 85 c 10 16 14 12 10 40 30 20 10 p out , output power (watts) cw figure 9. evm and drain efficiency versus output power ?50 ?60 ?65 ?70 ?75 1920 ?85 figure 10. spectral regrowth at 400 khz and 600 khz versus frequency f, frequency (mhz) p out = 61 w avg. 44 w avg. 20 w avg. v dd = 28 vdc i dq = 700 ma p out , output power (watts) avg. 100 4 12 v dd = 28 vdc i dq = 700 ma f = 1960 mhz edge modulation 8 6 0 10 1 2 20 60 40 30 0 10 85 c g ps t c = ?30 c 25 c 85 c ?75 ?40 0 p out , output power (watts) ?50 ?55 ?60 ?65 ?70 20 figure 11. spectral regrowth at 400 khz versus output power d , drain efficiency (%) d , drain efficiency (%) d g ps , power gain (db) evm, error vector magnitude (% rms) 2000 0 5 3 1 1980 1960 1940 1920 4 2 evm, error vector magnitude (% rms) spectral regrowth @ 400 khz (dbc) spectral regrowth @ 400 khz and 600 khz (dbc) 25 c 85 c 10 50 evm 25 c 1940 1960 1980 2000 v dd = 28 vdc i dq = 700 ma f = 1960 mhz edge modulation p out = 61 w avg. 44 w avg. 20 w avg. 61 w avg. 44 w avg. 20 w avg. f, frequency (mhz) 40 60 80 100 v dd = 28 vdc, i dq = 700 ma f = 1960 mhz, edge modulation 85 c 25 c ?85 ?55 0 p out , output power (watts) ?60 ?70 ?75 ?80 figure 12. spectral regrowth at 600 khz versus output power spectral regrowth @ 600 khz (dbc) 20 40 60 80 100 ?65 sr @ 400 khz sr @ 600 khz t c = ?30 c ?55 ?80 1900 2020 ?45 v dd = 28 vdc, i dq = 700 ma f = 1960 mhz, edge modulation d t c = ?30 c
8 rf device data freescale semiconductor mrf6s18100nr1 MRF6S18100NBR1 typical characteristics 210 1.e+09 90 t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 100 110 120 130 140 150 160 170 180 1.e+08 1.e+06 1.e+07 figure 13. mttf factor versus junction temperature mttf factor (hours x amps 2 ) 190 200 gsm test signal figure 14. edge spectrum ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?100 200 khz span 2 mhz center 1.96 ghz ?110 400 khz 600 khz 400 khz 600 khz (db) reference power vbw = 30 khz sweep time = 70 ms rbw = 30 khz
mrf6s18100nr1 MRF6S18100NBR1 9 rf device data freescale semiconductor z o = 5 z load f = 1900 mhz f = 2020 mhz z source f = 1900 mhz f = 2020 mhz v dd = 28 vdc, i dq = 900 ma, p out = 100 w f mhz z source z load 1900 2.80 - j4.53 1.75 - j3.52 1930 2.71 - j4.27 1.67 - j3.25 1960 2.63 - j4.03 1.59 - j2.99 1990 2.56 - j3.79 1.52 - j2.74 2020 2.51 - j3.57 1.47 - j2.51 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network figure 15. series equivalent source and load impedance ? 1930 - 1990 mhz
10 rf device data freescale semiconductor mrf6s18100nr1 MRF6S18100NBR1 figure 16. mrf6s18100nr1(nbr1) test circuit schematic ? 1805 - 1880 mhz z9 0.485 x 1.000 microstrip z10* 0.080 x 0.083 microstrip z11* 0.340 x 0.083 microstrip z12* 0.975 x 0.083 microstrip z14, z15 0.960 x 0.080 microstrip pcb taconic tlx8 - 0300, 0.030 , r = 2.55 *variable for tuning. z1, z13 0.250 x 0.083 microstrip z2* 0.620 x 0.083 microstrip z3* 0.715 x 0.083 microstrip z4* 0.190 x 0.083 microstrip z5 0.365 x 1.000 microstrip z6 1.190 x 0.080 microstrip z7, z8 0.115 x 1.000 microstrip v bias v supply rf output rf input dut c1 c2 c3 c4 c5 r1 z1 z2 z3 c6 z8 r2 z6 r3 z7 z14 z15 v supply c14 c15 c16 c7 c8 z4 z5 z9 c13 z10 z12 z13 c17 + c10 c12 z11 c11 c9 table 7. mrf6s18100nr1(nbr1) test circuit component designations and values ? 1805 - 1880 mhz part description part number manufacturer c1 100 nf chip capacitor (1206) 1206c104kat avx c2, c3, c6, c13, c14 8.2 pf 600b chip capacitors 600b8r2bw atc c4, c5, c15, c16 4.7 f chip capacitors (1812) c4532x5r1h475mt tdk c7, c8, c11, c12 0.2 pf 700b chip capacitors 700b0r2bw atc c9 1 pf 600b chip capacitor 600b1r0bw atc c10 0.5 pf 600b chip capacitor 600b0r5bw atc c17 470 f, 63 v electrolytic capacitor, radial 13661471 philips r1, r2 10 k , 1/4 w chip resistor (1206) r3 10 , 1/4 w chip resistor (1206)
mrf6s18100nr1 MRF6S18100NBR1 11 rf device data freescale semiconductor figure 17. mrf6s18100nr1(nbr1) test circuit component layout ? 1805 - 1880 mhz mrf6s18100n cut out area r1 rev. 0 r2 c1 c2 r3 c6 c7 c8 c17 c3 c4 c5 c10 c13 c14 c15 c16 c9 c11 c12
12 rf device data freescale semiconductor mrf6s18100nr1 MRF6S18100NBR1 typical characteristics ? 1805 - 1880 mhz g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 12 1800 20 g ps v dd = 28 vdc i dq = 900 ma 17 60 50 40 30 1880 irl figure 18. power gain, input return loss and drain efficiency versus frequency @ p out = 100 watts ?30 0 ?10 ?20 ?40 d , drain efficiency (%) 16 15 14 d 1810 1820 1830 1840 1850 13 1860 1870 1800 1880 1810 1820 1830 1840 1850 1860 1870 g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 13 20 g ps v dd = 28 vdc i dq = 900 ma 16 50 40 30 irl figure 19. power gain, input return loss and drain efficiency versus frequency @ p out = 40 watts ?30 ?10 ?20 ?40 d , drain efficiency (%) 15 14 d figure 20. evm versus frequency f, frequency (mhz) p out = 60 w avg. 42 w avg. 25 w avg. v dd = 28 vdc i dq = 700 ma evm, error vector magnitude (% rms) 1900 1 6 3 1880 1860 1840 1800 4 2 5 1820 figure 21. evm and drain efficiency versus output power p out , output power (watts) avg. 100 4 10 v dd = 28 vdc i dq = 700 ma f = 1840 mhz edge modulation 8 6 0 10 1 2 20 50 40 30 0 10 d , drain efficiency (%) evm, error vector magnitude (% rms) t c = 25 c d evm 10
mrf6s18100nr1 MRF6S18100NBR1 13 rf device data freescale semiconductor typical characteristics ? 1805 - 1880 mhz ?45 ?60 ?65 ?70 ?75 1780 ?85 figure 22. spectral regrowth at 400 khz and 600 khz versus frequency spectral regrowth @ 400 khz and 600 khz (dbc) 1800 1820 1840 1860 ?55 1880 1900 1920 ?75 ?45 0 p out , output power (watts) ?50 ?55 ?60 ?65 ?70 figure 23. spectral regrowth at 400 khz versus output power spectral regrowth @ 400 khz (dbc) 20 40 60 80 t c = 25 c ?85 ?60 0 p out , output power (watts) ?70 ?75 ?80 20 figure 24. spectral regrowth at 600 khz versus output power spectral regrowth @ 600 khz (dbc) 40 60 80 ?65 f, frequency (mhz) ?50 ?80 v dd = 28 vdc i dq = 700 ma f = 1960 mhz p out = 60 w avg. 42 w avg. 25 w avg. 60 w avg. 25 w avg. 42 w avg. sr @ 400 khz sr @ 600 khz v dd = 28 vdc, i dq = 700 ma f = 1840 mhz, edge modulation v dd = 28 vdc, i dq = 700 ma f = 1840 mhz, edge modulation t c = 25 c
14 rf device data freescale semiconductor mrf6s18100nr1 MRF6S18100NBR1 z o = 5 z load z source f = 1900 mhz f = 1780 mhz f = 1780 mhz f = 1900 mhz v dd = 28 vdc, i dq = 900 ma, p out = 100 w f mhz z source z load 1780 1.96 - j4.09 1.94 - j2.90 1804 1.90 - j3.86 1.88 - j2.67 1840 1.82 - j3.53 1.80 - j2.42 1880 1.76 - j3.16 1.73 - j1.99 1900 1.72 - j2.97 1.70 - j1.82 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network figure 25. series equivalent source and load impedance ? 1805 - 1880 mhz
mrf6s18100nr1 MRF6S18100NBR1 15 rf device data freescale semiconductor notes
16 rf device data freescale semiconductor mrf6s18100nr1 MRF6S18100NBR1 package dimensions case 1486 - 03 issue c datum plane bottom view a1 2x d1 e3 e1 d3 e4 a2 pin 5 note 8 a b c h drain lead d a m aaa c 4x b1 2x d2 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at the top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions ? d" and ? e1" do not include mold protrusion. allowable protrusion is .006 per side. dimensions ? d" and ? e1" do include mold mismatch and are deter? mined at datum plane ?h?. 5. dimension ? b1" does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the ? b1" dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. 7. dimension a2 applies within zone ? j" only. 8. hatching represents the exposed area of the heat slug. c1 f zone j e2 2x a dim a min max min max millimeters .100 .104 2.54 2.64 inches a1 .039 .043 0.99 1.09 a2 .040 .042 1.02 1.07 d .712 .720 18.08 18.29 d1 .688 .692 17.48 17.58 d2 .011 .019 0.28 0.48 d3 .600 ? ? ? 15.24 ? ? ? e .551 .559 14 14.2 e1 .353 .357 8.97 9.07 e2 .132 .140 3.35 3.56 e3 .124 .132 3.15 3.35 e4 .270 ? ? ? 6.86 ? ? ? f b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .025 bsc .106 bsc 0.64 bsc 2.69 bsc 1 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source aaa .004 0.10 gate lead 4x e 2x e seating plane 4 2 3 ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? note 7 e5 e5 e5 .346 .350 8.79 8.89 to - 270 wb - 4 mrf6s18100nr1
mrf6s18100nr1 MRF6S18100NBR1 17 rf device data freescale semiconductor
18 rf device data freescale semiconductor mrf6s18100nr1 MRF6S18100NBR1
mrf6s18100nr1 MRF6S18100NBR1 19 rf device data freescale semiconductor
20 rf device data freescale semiconductor mrf6s18100nr1 MRF6S18100NBR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s18100n rev. 1, 5/2006

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